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DATA SHEET
SILICON POWER MOS FET
NE552R679A
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V FRS (Family Radio Service). Dies are manufactured using our NEWMOS2 technology (our WSi gate lateral-diffusion MOS FET) and housed in a surface mount package. This device can deliver 28.0 dBm output power with 60% power added efficiency at 460 MHz under the 3.0 V supply voltage.
FEATURES
* High output power * High linear gain * Surface mount package * Single supply : Pout = 28.0 dBm TYP. (VDS = 3.0 V, IDset = 300 mA, f = 460 MHz, Pin = 15 dBm) : GL = 20 dB TYP. (VDS = 3.0 V, IDset = 300 mA, f = 460 MHz, Pin = 5 dBm) : 5.7 x 5.7 x 1.1 mm MAX. : VDS = 2.8 to 6.0 V * High power added efficiency : add = 60% TYP. (VDS = 3.0 V, IDset = 300 mA, f = 460 MHz, Pin = 15 dBm)
APPLICATIONS
* Family Radio Service : 3.0 V Handsets
ORDERING INFORMATION
Part Number NE552R679A-T1 Package 79A Marking AU Supplying Form * 12 mm wide embossed taping * Gate pin face the perforation side of the tape * Qty 1 kpcs/reel * 12 mm wide embossed taping * Gate pin face the perforation side of the tape * Qty 5 kpcs/reel
NE552R679A-T1A
Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE552R679A
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information.
Document No. PU10125EJ01V1DS (1st edition) Date Published April 2002 CP(K) Printed in Japan
NEC Compound Semiconductor Devices 2001, 2002
NE552R679A
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current (Pulse Test) Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS IDS IDS
Note
Ratings 8.0 5.0 350 600 10 125 -55 to +125
Unit V V mA mA W C C
Pt Tch Tstg
Note Duty Cycle 50%, Ton 1 s
RECOMMENDED OPERATING CONDITIONS
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Symbol VDS VGS IDS Pin f = 460 MHz, VDS = 3.0 V Test Conditions MIN. 2.8 0 - 14 TYP. MAX. Unit V V mA dBm
3.0
2.0 300 15
6.0
3.0 500 20
ELECTRICAL CHARACTERISTICS (TA = +25C, Unless otherwise specified, using NEC standard test fixture)
Parameter Gate to Source Leak Current Saturated Drain Current (Zero Gate Voltage Drain Current) Gate Threshold Voltage Thermal Resistance Transconductance Drain to Source Breakdown Voltage Output Power Drain Current Power Added Efficiency Linear Gain
Note2
Symbol IGSO IDSS Vth Rth gm BVDSS Pout ID
Test Conditions VGS = 5.0 V VDS = 8.0 V VDS = 3.5 V, IDS = 1 mA Channel to Case VDS = 3.0 V, IDS = 300 mA IDSS = 10 A f = 460 MHz, VDS = 3.0 V, Pin = 15 dBm, IDset = 300 mA (RF OFF) , Note1
MIN. - - 1.0 - - 15 26.0 - 55 -
TYP. - - 1.4 - 0.6 18 28.0 320 60 20
MAX. 100 100 1.9 10 - - - - - -
Unit nA nA V C/W S V dBm mA % dB
add
GL
Note 1. DC performance is 100% testing. RF performance is testing several samples per wafer. Wafer rejection criteria for standard devices is 1 reject for several samples. 2. Pin = 5 dBm
2
Data Sheet PU10125EJ01V1DS
NE552R679A
TYPICAL CHARACTERISTICS (TA = +25C)
Drain Current IDS (mA)
OUTPUT POWER, DRAIN CURRENT d, add vs. INPUT POWER
30 f = 460 MHz VDS = 3.0 V IDQ = 300 mA 1 250 Pout 1 000
IMD vs. 2TONE TO OUTPUT POWER
-10 -20 -30 f = 460 MHz f = 1 MHz VDS = 3.0 V IDQ = 300 mA IM3 -40 IM5 -50 -60 -70 5
Output Power Pout (dBm)
20
750
75
add
15 IDS 10 250 25 500 50
5 -5
0
5
10
15
0 20
0
IMD (dBc)
d
Drain Efficiency d (%) Power Added Efficiency add (%)
25
100
10
15
20
25
30
Input Power Pin (dBm)
2Tone to Output Power Pout (dBm)
Drain Current IDS (mA)
30
Output Power Pout (dBm)
Drain Efficiency d (%) Power Added Efficiency add (%)
Pout 20
20
d
add
750
75
d
add
750
75
15 IDS 10
500
50
15 IDS 10
500
50
250
25
250
25
5 -5
0
5
10
15
0 20
0
5 -5
0
5
10
15
0 20
0
Input Power Pin (dBm)
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10125EJ01V1DS
Drain Efficiency d (%) Power Added Efficiency add (%)
100
Output Power Pout (dBm)
25
f = 460 MHz VDS = 3.0 V IDQ = 100 mA
1 250 Pout 1 000
30
25
f = 460 MHz VDS = 3.5 V IDQ = 100 mA
1 250
1 000
Drain Current IDS (mA)
100
OUTPUT POWER, DRAIN CURRENT d, add vs. INPUT POWER
OUTPUT POWER, DRAIN CURRENT d, add vs. INPUT POWER
3
NE552R679A
S-PARAMETERS
Test Conditions: VDS = 3.0 V, IDset = 300 mA, TA = +25 C)
Frequency GHz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 S11 Mag. 0.655 0.651 0.666 0.660 0.656 0.655 0.654 0.658 0.656 0.658 0.663 0.668 0.668 0.668 0.672 0.674 0.673 0.675 0.677 0.677 0.677 0.677 0.681 0.677 0.675 0.674 0.673 0.670 0.667 0.665 0.662 0.648 0.656 0.652 0.651 0.648 0.644 0.641 0.636 0.633 Ang. -120.2 -142.0 -156.1 -161.4 -165.8 -168.4 -170.2 -171.8 -172.8 -173.8 -175.0 -175.8 -176.8 -177.6 -178.5 -179.2 -180.0 179.2 178.5 177.8 177.0 176.2 175.4 174.7 174.6 173.8 173.2 172.3 171.4 170.7 169.9 168.9 168.6 167.6 167.1 166.2 165.4 164.7 163.8 163.0 dB 21.2 17.2 13.8 11.5 9.4 7.8 6.5 5.2 4.1 3.1 2.1 1.1 0.4 -0.4 -1.1 -1.8 -2.5 -3.2 -3.8 -4.4 -4.9 -5.4 -6.0 -6.5 -6.9 -7.4 -7.9 -8.3 -8.7 -9.1 -9.5 -9.8 -10.4 -10.6 -11.0 -11.3 -11.6 -12.0 -12.3 -12.6 S21 Mag. 11.42 7.25 4.89 3.74 2.96 2.46 2.10 1.81 1.61 1.43 1.27 1.14 1.04 0.96 0.88 0.81 0.75 0.69 0.65 0.61 0.57 0.54 0.50 0.48 0.45 0.43 0.40 0.39 0.37 0.35 0.33 0.32 0.30 0.29 0.28 0.27 0.26 0.25 0.24 0.23 Ang. 115.3 99.3 88.2 81.6 77.2 72.6 68.4 64.4 60.6 56.6 53.3 49.9 46.6 43.7 40.6 37.5 34.6 31.7 28.9 26.4 24.0 21.2 19.2 16.6 13.9 11.7 9.5 7.8 5.7 3.5 1.4 -0.1 -1.4 -2.8 -4.5 -6.6 -7.9 -10.1 -11.5 -12.5 dB -31.6 -29.0 -29.3 -29.2 -29.2 -29.3 -29.5 -29.6 -29.7 -29.8 -30.0 -30.2 -30.3 -30.6 -30.7 -31.0 -31.1 -31.3 -31.6 -31.7 -31.9 -32.2 -32.2 -32.5 -32.7 -32.8 -33.0 -33.2 -33.4 -33.4 -33.7 -34.1 -34.6 -35.3 -35.6 -35.6 -35.7 -36.0 -36.1 -36.2 S12 Mag. 0.026 0.035 0.034 0.034 0.035 0.034 0.033 0.033 0.033 0.032 0.031 0.031 0.030 0.030 0.029 0.028 0.028 0.027 0.026 0.026 0.025 0.025 0.025 0.024 0.023 0.023 0.022 0.022 0.021 0.021 0.021 0.020 0.019 0.017 0.017 0.017 0.016 0.016 0.016 0.015 S22 Ang. 28.7 10.3 -0.1 -5.6 -11.8 -15.9 -20.1 -24.2 -27.6 -31.5 -35.3 -39.1 -42.1 -45.4 -49.0 -51.8 -55.3 -58.6 -61.5 -64.6 -68.3 -71.4 -75.1 -78.2 -82.0 -85.1 -89.7 -92.3 -96.7 -101.5 -106.4 -111.8 -117.6 -122.0 -123.8 -126.7 -130.5 -135.9 -140.3 -144.7 Mag. 0.633 0.757 0.796 0.808 0.815 0.819 0.823 0.828 0.831 0.835 0.840 0.843 0.846 0.851 0.853 0.857 0.859 0.862 0.864 0.867 0.869 0.869 0.863 0.873 0.874 0.874 0.873 0.875 0.874 0.873 0.873 0.879 0.872 0.871 0.871 0.870 0.869 0.868 0.867 0.865 Ang. -167.5 -167.9 -173.0 -175.0 -175.9 -176.8 -177.4 -178.0 -179.4 -179.9 179.6 179.2 178.7 178.2 177.7 177.4 176.6 176.1 175.5 174.9 174.2 173.6 172.6 172.4 171.7 170.9 170.1 169.4 168.7 167.9 167.2 166.8 165.7 164.9 164.1 163.1 162.3 161.4 160.4 159.4 MAG Note MSG Note dB dB 26.4 23.1 21.5 20.4 19.3 18.6 18.0 16.2 14.2 12.8 11.7 10.7 9.8 9.1 8.2 7.6 6.8 6.1 5.5 5.0 4.4 3.8 3.0 2.8 2.2 1.7 1.2 0.8 0.3 -0.2 -0.8 -1.0 -1.7 -2.1 -2.4 -2.8 -3.2 -3.7 -4.0 -4.4 K - 0.59 0.36 0.40 0.50 0.62 0.76 0.91 1.04 1.20 1.37 1.54 1.75 1.93 2.14 2.38 2.61 2.87 3.20 3.51 3.76 4.12 4.57 5.14 5.35 5.82 6.29 6.90 7.45 8.10 8.64 9.63 10.28 12.13 13.80 14.87 15.51 16.66 18.41 19.61 21.02
Note When K 1, the MAG (Maximum Available Gain) is used. When K < 1, the MSG (Maximum Stable Gain) is used.
S21 MAG = S12 MSG = S21 S12
(K - (K - 1) )
2
,K=
1+ -S11 2 -S22
2
2
,
= S11 S22 - S21 S12
LARGE SIGNAL IMPEDANCE (VDS = 3.0 V, IDS = 300 mA, f = 460 MHz)
f (MHz) 460 Zin () 7.47 +j18.24 ZOL () Note 4.82 +j5.04
Note ZOL is the conjugate of optimum load impedance at given voltage, idling current, input power and frequency.
4
Data Sheet PU10125EJ01V1DS
NE552R679A
EVALUATION BOARD for 460 MHz
Unit : mm
VGS
C9 C8 C7 C7 C8 C9
VDS
R1
L1
C4
30.0
C6
C6 C3 C2 C1 C5
48.0
Symbol C1 C2 C3 C4 C5 C6 C7 C8 C9 R1 L1 Circuit Board Value 9.1 pF 12 pF 20 pF 3.3 pF 13 pF 22 pF 1 000 pF 0.33 F 3.3 F - 16V 1 000 22 nH t = 0.4 mm, r = 4.5 R4775 Comment
Data Sheet PU10125EJ01V1DS
5
NE552R679A
PACKAGE DIMENSIONS 79A (UNIT: mm)
(Bottom View)
4.2 MAX. Source 1.50.2 Source
U
0X001
4.4 MAX.
5.7 MAX.
A
0.40.15 5.7 MAX.
0.20.1
0.80.15
1.0 MAX.
0.8 MAX. 3.60.2
79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm)
4.0 1.7
0.90.2
Source
Stop up the hole with a rosin or something to avoid solder flow.
Gate
Drain
5.9
1.0
0.5
Through Hole: 0.2 x 33 0.5 0.5 6.1
6
Data Sheet PU10125EJ01V1DS
1.2
1.2 MAX.
Gate
0.60.15
Drain
Gate
Drain
NE552R679A
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method Infrared Reflow Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220C or higher Preheating time at 120 to 180C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Peak temperature (package surface temperature) Time at temperature of 200C or higher Preheating time at 120 to 150C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Peak temperature (molten solder temperature) Time at peak temperature Preheating temperature (package surface temperature) Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) Peak temperature (pin temperature) Soldering time (per pin of device) Maximum chlorine content of rosin flux (% mass) : 260C or below : 10 seconds or less : 60 seconds or less : 12030 seconds : 3 times : 0.2%(Wt.) or below : 215C or below : 25 to 40 seconds : 30 to 60 seconds : 3 times : 0.2%(Wt.) or below : 260C or below : 10 seconds or less : 120C or below : 1 time : 0.2%(Wt.) or below : 350C or below : 3 seconds or less : 0.2%(Wt.) or below Condition Symbol IR260
For soldering
VPS
VP215
Wave Soldering
WS260
Partial Heating
HS350-P3
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PU10125EJ01V1DS
7
NE552R679A
* The information in this document is current as of March, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4 - 0110
8
Data Sheet PU10125EJ01V1DS
NE552R679A
Business issue NEC Compound Semiconductor Devices, Ltd. 5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: salesinfo@csd-nec.com NEC Compound Semiconductor Devices Hong Kong Limited Hong Kong Head Office FAX: +852-3107-7309 TEL: +852-3107-7303 Taipei Branch Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Korea Branch Office FAX: +82-2-528-0302 TEL: +82-2-528-0301 NEC Electron Devices European Operations http://www.nec.de/ TEL: +49-211-6503-101 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 Technical issue NEC Compound Semiconductor Devices, Ltd. http://www.csd-nec.com/ Sales Engineering Group, Sales Division E-mail: techinfo@csd-nec.com FAX: +81-44-435-1918
0110

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